A. R. Kortan, H. S. Chen, J. M. Parsey and L. C. Kimerling, "Morphology and
Microstructure of Al-Li-Cu Quasicrystals," Journal of Materials Science, 24 6 (1989).
C. Kimerling, "Process-Control for Heterogeneous Materials Systems – A
Universal Challenge," Jom-Journal of the Minerals Metals & Materials Society, 41 4 (1989).
Katz, B. E. Weir, D. M. Maher, P. M. Thomas, M. Soler, W. C. Dautremontsmith, R. F.
Karlicek, J. D. Wynn and L. C. Kimerling, "Highly Stable W/P-In0.53Ga0.47As
Ohmic Contacts Formed by Rapid Thermal-Processing," Appl. Phys. Lett., 55 21 (1989).
R. C. Farrow, M. T. Asom, K. A. Jackson and L. C. Kimerling, "SEM Study of
Phase-Transformation in Alpha-Sn Thin-Films," Institute of Physics Conference Series, 100 (1989).
S. Chen, A. R. Kortan, F. A. Thiel and L. C. Kimerling, "YbBa2Cu3O7 Epitaxial-Films
Grown by a Ag-Enhanced Liquid Gas Solidification Process," Appl. Phys. Lett., 55 2 (1989).
T. Asom, A. R. Kortan, L. C. Kimerling and R. C. Farrow, "Structure and Stability Of
Metastable Alpha-Sn," Applied Physics Letters, 55 14 (1989).
T. Asom, E. A. Fitzgerald, A. R. Kortan, B. Spear and L. C. Kimerling,
"Epitaxial-Growth of Metastable SnGe Alloys," Appl. Phys. Lett., 55 6 (1989).
S. Chen, S. H. Liou, A. R. Kortan and L. C. Kimerling, "Growth Of Epitaxial YbBa2Cu3O7
Superconductor by Liquid-Gas-Solidification Processing," Appl. Phys. Lett., 53 8 (1988).
T. Asom, J. M. Parsey, L. C. Kimerling, R. Sauer and F. A. Thiel, "Changes in the
Electronic-Properties Of Bulk GaAs By Thermal Annealing," Appl. Phys. Lett., 52 18 (1988).
M. T. Asom, A. R. Kortan, L. C. Kimerling, J. L. Benton and R. Feldman, "MBE Growth of
Metastable Alpha-Sn on Heterostructures Of GaAs/InSb and GaAs/ZnTe/CdTe," Journal of Electronic Materials, 17 4 (1988).
R. Sauer, M. Asom, R. People, D. V. Lang, L. C. Kimerling and J. C. Bean, "New
Photoluminescence Defect at 1.0192 eV in Silicon Molecular-Beam Epitaxy Layers
Ascribed to Cu," Applied Physics
Letters, 51 15 (1987).
L. C. Kimerling, "Materials Characterization as a Technology Driver," Journal of the Electrochemical Society, 134 8B (1987).
A. Chantre, S. J. Pearton, L. C. Kimerling, K. D. Cummings and W. C. Dautremontsmith,
"Interaction of Hydrogen and Thermal Donor Defects in Silicon," Appl. Phys. Lett., 50 9 (1987).
M. T. Asom, J. M. Parsey, L. C. Kimerling, D. C. Joy, R. Sauer and F. A. Thiel,
"Modification of Electronic-Properties of Bulk GaAs by Thermal
Annealing," Journal of Electronic Materials, 16 4 (1987).
M. T. Asom, J. L. Benton, R. Sauer and L. C. Kimerling, "Interstitial Defect Reactions
in Silicon," Appl. Phys. Lett., 51 4 (1987).
M. Lee, L. C. Kimerling, B. G. Bagley and W. E. Quinn, "The Optically Detected
Magnetic-Resonance of Dangling Bonds at the Si/Si/O2 Interface," Solid State Communications, 57 8 (1986).
A. Chantre and L. C. Kimerling, "Configurationally Multistable Defect in
Silicon," Appl. Phys. Lett., 48 15 (1986).
M. Stavola, K. M. Lee, J. C. Nabity, P. E. Freeland and L. C. Kimerling, "Site
Symmetry and Ground-State Characteristics for the Oxygen Donor in
Silicon," Physical Review Letters, 54 24 (1985).
L. C. Kimerling, J. M. Parsey and Metallurgical Society of AIME. Electronic Materials
Committee., "Proceedings of the 13th International Conference on Defects
in Semiconductors," Warrendale, Pa., Metallurgical Society of AIME, 1985.
L. C. Kimerling and J. M. Parsey, "Imperfection in Semiconductor-Materials," Journal of Metals, 37 5 (1985).
L. C. Kimerling, "Frontiers in the Science of Electronic Materials," Journal of Metals, 37 5 (1985).
Stavola, M. Levinson, J. L. Benton and L. C. Kimerling, "Extrinsic Self-Trapping and
Negative U in Semiconductors – A Metastable Center in InP," Physical Review B, 30 2 (1984).
S. K. Milshtein, D. C. Joy, S. D. Ferris and L. C. Kimerling, "Defect
Characterization Using SEM-CCM – Relative Contrast Measurements," Physica Status Solidi a-Applied Research,
84 2 (1984).
J. L. Benton, M. Levinson, A. T. Macrander, H. Temkin and L. C. Kimerling,
"Recombination Enhanced Defect Annealing in N-InP," Appl. Phys. Lett., 45 5 (1984).
M. Stavola, J. R. Patel, L. C. Kimerling and P. E. Freeland, "Diffusivity of Oxygen in
Silicon at the Donor Formation Temperature," Appl. Phys. Lett., 42 1
(1983).
M. Stavola and L. C. Kimerling, "Symmetry Determination for Deep States in
Semiconductors from Stress-Induced Dichroism of Photocapacitance," Journal of Applied Physics, 54 7 (1983).
M. Levinson, M. Stavola, J. L. Benton and L. C. Kimerling, "Metastable M-Center In InP
– Defect-Charge-State Controlled Structural Relaxation," Physical Review B, 28 10 (1983).
M. Levinson, J. L. Benton and L. C. Kimerling, "Electronically Controlled Metastable
Defect Reaction in InP," Physical
Review B, 27 10 (1983).
L. C. Kimerling and J. L. Benton, "Electronically Controlled Reactions of
Interstitial Iron in Silicon," Physica
B & C, 116 1-3 (1983).
L. C. Kimerling, "Electronic-Structure and Properties – Fradin, Fy," Journal of Testing and Evaluation, 11 3 (1983).
L. C. Kimerling, "Defects in Semiconductors – 1982," Physica B & C, 116 1-3 (1983).
W. M. Bullis, L. C. Kimerling and Electrochemical Society. Electronics Division.,
"Proceedings of the Symposium on Defects in Silicon," Pennington, NJ
(10 S. Main St., Pennington 08534-2896), Electrochemical Society, 1983.
J. L. Benton, L. C. Kimerling and M. Stavola, "The Oxygen Related Donor Effect
in Silicon," Physica B & C, 116 1-3 (1983).
M. Levinson, J. L. Benton, H. Temkin and L. C. Kimerling, "Defect states in electron
bombarded n-InP," Applied Physics Letters, 40 11 (1982).
G. K.Celler, G. L. Miller, J. L. Benton, D. C. Jacobson, L. C. Kimerling, M. D.
Robinson and D. J. Lischner, "Rapid Thermal Annealing of Ion-Implanted Si
with Tungsten-Halogen Lamps," Journal of the Electrochemical Society, 129 3 (1982).
J. L. Benton and L. C. Kimerling, "Capacitance Transient Spectroscopy of Trace
Contamination in Silicon," Journal of the Electrochemical Society, 129 9 (1982).
V. Swaminathan, L. C. Kimerling and W. R. Wagner, "The Effect of
Electron-Irradiation on the Low-Temperature Emission-Spectra from Ge-Doped
Ga0.60Al0.40As Grown by Liquid-Phase Epitaxy," Appl. Phys. Lett., 38 11 (1981).
J. R. Patel and L. C. Kimerling, "Dislocation Energy-Levels in Deformed Silicon,"
Crystal Research and Technology, 16 2 (1981).
L. C. Kimerling and J. L. Benton, "Oxygen-related donor states in
silicon," Appl. Phys. Lett., 39 5 (1981).
L. C. Kimerling and J. L. Benton, "The Electrical-Activity of Oxygen in
Silicon," Journal of the Electrochemical Society, 127 8 (1980).
J. L. Benton, C. J. Doherty, S. D. Ferris, D. L. Flamm, L. C. Kimerling and H. J.
Leamy, "Hydrogen passivation of point defects in silicon," Appl. Phys. Lett., 36 8 (1980).
