J. R. Troxell, A. P. Chatterjee, G. D. Watkins and L. C. Kimerling,
"Recombination-Enhanced Migration of Interstitial Aluminum in
Silicon," Physical Review B, 19 10 (1979).
J. R. Patel and L. C. Kimerling, "Dislocation Defect States in Silicon," Journal De Physique, 40 (1979).
L. C. Kimerling and J. R. Patel, "Defect states associated with dislocations in
silicon," Appl. Phys. Lett., 34 1 (1979).
L. C. Kimerling, H. J. Leamy and K. A. Jackson, "Photoinduced Zone Migration in
Semiconductors," Journal of the Electrochemical Society, 126 8 (1979).
L. J. Cheng, J. P. Karins, J. W. Corbett and L. C. Kimerling, "Positron lifetimes in
GaAs," Journal of Applied Physics, 50 4 (1979).
L. C. Kimerling and J. R. Patel, "Defect States of Dislocations in
Silicon," Bulletin of the American Physical Society, 23 3 (1978).
L. C. Kimerling, "Recombination Enhanced Defect Reactions," Solid-State Electronics, 21 11-1 (1978).
L. E. Katz and L. C. Kimerling, "Defect Formation During High-Pressure,
Low-Temperature Steam Oxidation of Silicon," Journal of the Electrochemical Society, 125 10 (1978).
H. S. Chen, L. C. Kimerling, J. M. Poate and W. L. Brown, "Diffusion in a Pd-Cu-Si
Metallic Glass," Applied Physics Letters, 32 8 (1978).
G. K. Celler, J. M. Poate and L. C. Kimerling, "Spatially Controlled Crystal
Regrowth of Ion-Implanted Silicon by Laser Irradiation," Appl. Phys. Lett., 32 8 (1978).
W. C. Ballamy and L. C. Kimerling, "Premature Failure in Pt-GaAs IMPATT’s –
Recombination-Assisted Diffusion as a Failure Mechanism," Ieee Transactions on Electron Devices, 25 6 (1978).
H. J. Leamy and L. C. Kimerling, "Electron beam induced annealing of defects in
GaAs," Journal of Applied Physics, 48 7 (1977).
V. Lang, R. A. Logan and L. C. Kimerling, "Identification of Defect State Associated
with a Gallium Vacancy in GaAs and Alxga1-xAs," Bulletin of the American Physical Society, 22 3 (1977).
V. Lang, R. A. Logan and L. C. Kimerling, "Identification of Defect State Associated
with a Gallium Vacancy in GaAs and Alxga1-xAs," Physical Review B, 15 10 (1977).
A. J. R. de Kock, S. D. Ferris, L. C. Kimerling and H. J. Leamy, "SEM Observation of Dopant
Striae in Silicon," Journal of Applied Physics, 48 1 (1977).
L. C. Kimerling, H. J. Leamy and J. R. Patel, "The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski silicon," Appl. Phys. Lett., 30 5 (1977).
L. C. Kimerling, H. J. Leamy and J. R. Patel, "Defect States Associated with Dislocations and Stacking-Faults in Silicon," Bulletin of the American Physical Society, 22 3 (1977).
L. C. Kimerling, H. J. Leamy, J. L. Benton, S. D. Ferris, P. E. Freeland and J. J. Rubin, "Analysis of Impurity Distributions and Defect Structures in
Semiconductors by SEM-Charge Collection Microscopy," Journal of the Electrochemical Society, 124 3 (1977).
L. C. Kimerling, "Electrical Characterization of Defects in Silicon – Growth, Processing and Contamination Effects," Journal of Electronic Materials, 6 6 (1977).
L. C. Kimerling, "SEM Characterization of Electrical-Properties of Defects in Semiconductors," Abstracts of Papers
of the American Chemical Society, 174 SEP (1977).
A. J. R. de Kock, S. D. Ferris, L. C. Kimerling and H. J. Leamy, "SEM observation of dopant striae in silicon," Journal of Applied Physics, 48 1 (1977).
W. C. Ballamy and L. C. Kimerling, "Premature failure in Pt-GaAs IMPATTs – Recombination assisted diffusion as a failure mechanism," Electron Devices
Meeting, 1977 International, 90-92 (1977).
M. Petroff and L. C. Kimerling, "Recombination Enhanced Point-Defect Mobility And Degradation Of GaAlAs-GaAs (Dh) Laser-Diodes," Bulletin of the American Physical Society, 21 3 (1976).
H. J. Leamy, L. C. Kimerling and S. D. Ferris, "Semiconductor Crystal Characterization by Scanning Electron-Microscopy," Journal of Electronic Materials, 5 4 (1976).
D. V. Lang and L. C. Kimerling, "Observation of Athermal Recombination Enhanced Defect Motion in Semiconductors," Bulletin
of the American Physical Society, 21 3 (1976).
L. C. Kimerling and H. J. Leamy, "Contrast Analysis of Semiconductor Impurity Distributions and Defect Structures Observed in SEM Studies," Bulletin of the American Physical Society, 21 3 (1976).
J. D. Weeks, J. C. Tully and L. C. Kimerling, "Theory of Recombination Enhanced Defect Reactions in Semiconductors," Bulletin of the American Physical Society, 203 (1975).
H. J. Leamy, P. Petroff and L. C. Kimerling, "Electron-Beam Induced Annealing of Defects in GaAs And GaxAl1-xAs1-yPy," Journal of Electronic Materials, 4 6 (1975).
L. C. Kimerling and D. V. Lang, "Influence of E-H Recombination on Defect Stability in Semiconductors," Bulletin of the American Physical Society, 20 3 (1975).
L. C. Kimerling, C. P. Carnes and H. M. Deangelis, "Defect Introduction in Electron-Irradiated, P-Doped Silicon," Bulletin of the American Physical Society, 15 397 (1970).
H. M. DeAngelis, C. P. Carnes and L. C. Kimerling, "Isochronal Annealing of Electron-Irradiated, P-Doped Silicon," Bulletin of the American Physical Society, 15 397 (1970).
