EMAT Collaborator
Ph.D.,Institute of Semiconductor, Chinese Academy of Sciences
Dr. Pan pioneered the application of nanostructure in infrared photodetectors during his Ph.D. work and three year's of research at University of Virginia. His work on quantum dot infrared photodetectors have been cited more than 200 times. His current research interests include Ge/Si based modulators and detectors.
Before joining EMAT, he worked for industry and developed a tunable vertical cavity surfacing emitting laser at Nortel Network and Si-Based integrated optical circuits at LNL technologies.
Selected Publications:
- D. Pan, E. Towe and S. Kennerly, "Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures," Appl. Phys. Lett., 76 3537 (2000).
- D. Pan, E. Towe and S. Kennerly, "Photovoltaic quantum-dot infrared detectors," Appl. Phys. Lett., 76 3301 (2000).
- D. Pan, E. Towe and S. Kennerly, "Five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector," Appl. Phys. Lett., 75 2719 (1999).
- D. Pan, E. Towe and S. Kennerly, "Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors," Appl. Phys. Lett., 73 1937 (1998).
- D. Pan, J. Xu, E. Towe, et al, "Self-organization of (In, Ga)As/GaAs quantum dots on relaxed (In, Ga)As films," Appl. Phys. Lett., 73 2164 (1998).
- D. Pan, Y.P. Zeng, J.Wu and M. Kong, "Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice," Appl. Phys. Lett., 70 2440 (1997).
- D. Pan, J.M. Li, Y.P. Zeng, and M. Kong, "Long period two-dimensional gratings for 8-12 5m quantum well infrared photodetectors," J. Appl. Phys., 80 3552 (1996).
- D. Pan and E. Towe, "Conduction intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors," Electron Lett., 34 1883 (1998.)
- D. Pan, E. Towe, and S. Kennerly, "Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In, Ga)As/GaAs quantum dot structures," Electron Lett., 34 1019 (1998).
- D. Pan and M. Kong, "Long period grating for 3-5 µm quantum-well infrared photodetectors," Electron. Lett., 32 1032 (1996).
- D. Pan, Y.P. Zeng, et al, "Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice," Electron. Lett., 32 1726 (1996).
- E. Towe and D. Pan, "Nanostructures: Their application in a new class of infrared photodetectors," IEEE Journal of Selected topics in Quantum Electronics, 6 408 (2000).
- L. Chen, V.G. Stoleru, D. Pan and E. Towe, "Enchanced 1.3-µm-emission from InAs quantum dots embedded in symmetric (In, Ga)As quantum-well structures," J. Crystal Growth, 242 263 (2002).
- D. Pan, J. Xu and E. Towe, "Insensitivity of self-formed quantum dots to substrate surface roughness," J. Crystal Growth, 196 23 (1999).
- D. Pan, Y.P. Zeng, J. Wu, and M. Kong, "Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices," J. Crystal Growth, 181 297 (1997).