Kazumi Wada is a visiting professor from the Department of Materials Engingeering at the University of Tokyo. Kazumi graduated with his Ph.D. from Keio Universitty in Yokohama, Japan and started his career at Research Laboratories of Nippon Telephone and Telegraph (NTT) in Tokyo. While at NTT, he studied defects in silicon (Si) and III-V materials and devices. The results he obtained verified growth and nucleation mechanisms of oxide precipitates and dislocation loops in Czochralski Si. He also formulated the formation of those defects in terms of electron-hole equilibria of thermal donors (which are oxygen clusters in Czochralski Si).
In 1998, he joined the Microphotonics Group let by Prof. Kimerling at MIT, in which the goal was electronic and photonic convergence on a Si CMOS platform. He personally focused on the materials science and device physics of germanium (Ge) on Si photodetectors, and especially tensile-strain Ge photodetectors which had nearly ideal performance with an extended limit of wavelength detection. In addition, Kazumi worked on a photonic modulator which was later demonstrated as a monolithically integrated modulator with the smallest power consumption recorded to that point. In 2004, he returned to Japan and started Si microphotonics research at the University of Tokyo, where he led the JSPS project with international collaborations with US and EU (see here). While in Japan, he co-proposed the FIRST program on photonics and electronics convergence system technology 2009.
Kazumi won the 11th Hayashi Izuo Award on photonic and electronic integration for his work on Si LSIs in 2013. This award is named after Dr. Izuo Hayashi, who was one of the inventors of the first semiconductor laser diode based on GaAs/AlGaAs, and led the frontier work on photonics and electronics on Si mid '80s. Kazumi has served numerous government services worldwide, some of which are the Board of Directors of the Material Research Society (MRS), the Japan Society of Applied Physics (JSAP), Group IV Photonics (IEEE), and the SiGe Symposium of the Electrochemical Society (ECS). Kazumi also currently serves on the Editorial Board of AIP Applied Physics Review, is a Fellow of JSAP, and has authored and coauthored more than 200 refereed journal papers to go along with the 13 books he has edited. Last, but not least, Kazumi has filed more than 20 US-IPs and 10 JP-IPs. You may find more information here.
Dr. Duan received her Master's of Science from Beijing University of Science and Technology (BUST) in 1987 and her Ph.D. in materials science and engineering from BUST in 1992. Shortly afterwards, she joined EMAT in 1994 as a postdoctoral associate and in 1996, she became a research associate. Her current research focuses on microstructural studies of atomic and extended defects in semiconductors using electron microscopy and diffraction methods. Her projects cover Er ion implantation in silicon, silicon waveguides, and optical microcavities. Additionaly activities include the investigation of defects in CMOS and BiCMOS devices.