1970s

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• J. R. Troxell, A. P. Chatterjee, G. D. Watkins and L. C. Kimerling,
  “Recombination-Enhanced Migration of Interstitial Aluminum in
  Silicon,” Physical Review B, 19 10 (1979).

• J. R. Patel and L. C. Kimerling, “Dislocation Defect States in Silicon,” Journal De Physique, 40 (1979).

• L. C. Kimerling and J. R. Patel, “Defect states associated with dislocations in
  silicon,” Appl. Phys. Lett., 34 1 (1979).

• L. C. Kimerling, H. J. Leamy and K. A. Jackson, “Photoinduced Zone Migration in
  Semiconductors,” Journal of the Electrochemical Society, 126 8 (1979).

• L. J. Cheng, J. P. Karins, J. W. Corbett and L. C. Kimerling, “Positron lifetimes in
  GaAs,” Journal of Applied Physics, 50 4 (1979).

• L. C. Kimerling and J. R. Patel, “Defect States of Dislocations in
  Silicon,” Bulletin of the American Physical Society, 23 3 (1978).

• L. C. Kimerling, “Recombination Enhanced Defect Reactions,” Solid-State Electronics, 21 11-1 (1978).

• L. E. Katz and L. C. Kimerling, “Defect Formation During High-Pressure,
  Low-Temperature Steam Oxidation of Silicon,” Journal of the Electrochemical Society, 125 10 (1978).

• H. S. Chen, L. C. Kimerling, J. M. Poate and W. L. Brown, “Diffusion in a Pd-Cu-Si
  Metallic Glass,” Applied Physics Letters, 32 8 (1978).

• G. K. Celler, J. M. Poate and L. C. Kimerling, “Spatially Controlled Crystal
  Regrowth of Ion-Implanted Silicon by Laser Irradiation,” Appl. Phys. Lett., 32 8 (1978).

• W. C. Ballamy and L. C. Kimerling, “Premature Failure in Pt-GaAs IMPATT’s –
  Recombination-Assisted Diffusion as a Failure Mechanism,” Ieee Transactions on Electron Devices, 25 6 (1978).

• G. L. Miller, D. V. Lang and L. C. Kimerling, “Capacitance Transient Spectroscopy,” Annual Review of Materials Science, 7 377 (1977).

• H. J. Leamy and L. C. Kimerling, “Electron beam induced annealing of defects in
  GaAs,” Journal of Applied Physics, 48 7 (1977).

• V. Lang, R. A. Logan and L. C. Kimerling, “Identification of Defect State Associated
  with a Gallium Vacancy in GaAs and Alxga1-xAs,” Bulletin of the American Physical Society, 22 3 (1977).

• V. Lang, R. A. Logan and L. C. Kimerling, “Identification of Defect State Associated
  with a Gallium Vacancy in GaAs and Alxga1-xAs,” Physical Review B, 15 10 (1977).

• A. J. R. de Kock, S. D. Ferris, L. C. Kimerling and H. J. Leamy, “SEM Observation of Dopant
  Striae in Silicon,” Journal of Applied Physics, 48 1 (1977).

• L. C. Kimerling, H. J. Leamy and J. R. Patel, “The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski silicon,” Appl. Phys. Lett., 30 5 (1977).

• L. C. Kimerling, H. J. Leamy and J. R. Patel, “Defect States Associated with Dislocations and Stacking-Faults in Silicon,” Bulletin of the American Physical Society, 22 3 (1977).

• L. C. Kimerling, H. J. Leamy, J. L. Benton, S. D. Ferris, P. E. Freeland and J. J. Rubin, “Analysis of Impurity Distributions and Defect Structures in
  Semiconductors by SEM-Charge Collection Microscopy,” Journal of the Electrochemical Society, 124 3 (1977).

• L. C. Kimerling, “Electrical Characterization of Defects in Silicon – Growth, Processing and Contamination Effects,” Journal of Electronic Materials, 6 6 (1977).

• L. C. Kimerling, “SEM Characterization of Electrical-Properties of Defects in Semiconductors,” Abstracts of Papers
  of the American Chemical Society, 174 SEP (1977).

• A. J. R. de Kock, S. D. Ferris, L. C. Kimerling and H. J. Leamy, “SEM observation of dopant striae in silicon,” Journal of Applied Physics, 48 1 (1977).

• W. C. Ballamy and L. C. Kimerling, “Premature failure in Pt-GaAs IMPATTs – Recombination assisted diffusion as a failure mechanism,” Electron Devices
  Meeting, 1977 International, 90-92 (1977).

• M. Petroff and L. C. Kimerling, “Dislocation climb model in compound semiconductors with zinc blende structure,” Appl. Phys. Lett. 29, 461 (1976).

• M. Petroff and L. C. Kimerling, “Recombination Enhanced Point-Defect Mobility And Degradation Of GaAlAs-GaAs (Dh) Laser-Diodes,” Bulletin of the American Physical Society, 21 3 (1976).

• H. J. Leamy, L. C. Kimerling and S. D. Ferris, “Semiconductor Crystal Characterization by Scanning Electron-Microscopy,” Journal of Electronic Materials, 5 4 (1976).

• D. V. Lang, L. C. Kimerling and S. Y. Leung, “Recombination-Enhanced Annealing of E1 and E2 Defect Levels in 1-MeV-Electron-Irradiated n-GaAs,” Journal of Applied Physics 47, 3587 (1976).

• D. V. Lang and L. C. Kimerling, “Observation of athermal defect annealing in GaP,” Appl. Phys. Lett. 28, 248 (1976).

• D. V. Lang and L. C. Kimerling, “Observation of Athermal Recombination Enhanced Defect Motion in Semiconductors,” Bulletin
  of the American Physical Society, 21 3 (1976).

• L. C. Kimerling, P. Petroff and H. J. Leamy, “Injection-Stimulated Dislocation-Motion in Semiconductors,” Appl. Phys. Lett. 28, 297 (1976).

• L. C. Kimerling and H. J. Leamy, “Contrast Analysis of Semiconductor Impurity Distributions and Defect Structures Observed in SEM Studies,” Bulletin of the American Physical Society, 21 3 (1976).

• L. C. Kimerling, “New Developments in Defect Studies in Semiconductors,” Ieee Transactions on Nuclear Science, 23 6 (1976).

• L. C. Kimerling, “Electrical-Properties of Lattice-Defects in Si and Ge,” Bulletin of the American Physical Society, 21 3 (1976).

• J. D. Weeks, J. C. Tully and L. C. Kimerling, “Theory of Recombination Enhanced Defect Reactions in Semiconductors,” Physical Review B, 12 8 (1975).

• J. D. Weeks, J. C. Tully and L. C. Kimerling, “Theory of Recombination Enhanced Defect Reactions in Semiconductors,” Bulletin of the American Physical Society, 203 (1975).

• H. J. Leamy, P. Petroff and L. C. Kimerling, “Electron-Beam Induced Annealing of Defects in GaAs And GaxAl1-xAs1-yPy,” Journal of Electronic Materials, 4 6 (1975).

• D. V. Lang and L. C. Kimerling, “Studies of Recombination Enhanced Defect Motion in III-V Semiconductors,” Ieee Transactions on Electron Devices, 22 11 (1975).

• A. J. R. de Kock, S. D. Ferris, L. C. Kimerling and H. J. Leamy, “Investigation of Defects and Striations in As-Grown Si Crystals by SEM Using Schottky Diodes,” Appl. Phys. Lett., 27 6 (1975).

• L. C. Kimerling, P. Petroff and H. J. Leamy, “Injection Stimulated Dislocation-Motion In Semiconductors,” Ieee Transactions on Electron Devices, 22 11 (1975).

• L. C. Kimerling and D. V. Lang, “Influence of E-H Recombination on Defect Stability in Semiconductors,” Bulletin of the American Physical Society, 20 3 (1975).

• L. C. Kimerling, H. M. Deangelis and J. W. Diebold, “On the role of defect charge state in stability of point defects in silicon,” Solid State Communications, 16 171 (1975).

• J. J. Hauser and L. C. Kimerling, “Electrical-Conduction in Si-Implanted Amorphous Si,” Physical Review B, 11 10 (1975).

• A. J. R. de Kock, S. D. Ferris, L. C. Kimerling and H. J. Leamy, “Investigation of defects and striations in As-grown Si crystals by SEM using Schottky diodes,” Appl. Phys. Lett., 27 6 (1975).

• L. C. Kimerling, “Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniques,” Journal of Applied Physics, 45 4 (1974).

• L. C. Kimerling and P. J. Drevinsky, “Carrier Removal Effects in Neutron-Irradiated Lithium-Doped Silicon,” Nuclear Science, IEEE Transactions on, 18 6 (1971).

• L. C. Kimerling, H. M. DeAngelis and C. P. Carnes, “Annealing of Electron-Irradiated n-Type Silicon: Donor Concentration Dependence,” Physical Review B, 3 427 (1971).

• L. C. Kimerling and C. P. Carnes, “Annealing of Electron-Irradiated n-Type Silicon: Illumination and Fluence Dependence,” Journal of Applied Physics, 42 9 (1971).

• L. C. Kimerling, C. P. Carnes and H. M. Deangelis, “Defect Introduction in Electron-Irradiated, P-Doped Silicon,” Bulletin of the American Physical Society, 15 397 (1970).

• H. M. DeAngelis, C. P. Carnes and L. C. Kimerling, “Isochronal Annealing of Electron-Irradiated, P-Doped Silicon,” Bulletin of the American Physical Society, 15 397 (1970).