K. Wada, T. Chen, J. Michel, L. C. Kimerling, H. Aga, K. Mitani, T. Abe and M. Suezawa,
"Photonic bandgap formation by wafer bonding and delamination," Iii-V and Iv-Iv Materials and Processing
Challenges for Highly Integrated Microelectronics and Optoelectronics, 535 (1999).
A. L. Smith, S. T. Dunham and L. C. Kimerling, "Transition metal defect behavior and Si
density of states in the processing temperature regime," Physica B, 274 (1999).
J. Reddy, J. V. Chan, T. A. Burr, R. Mo, C. P. Wade, C. E. D. Chidsey, J. Michel and L. C.
Kimerling, "Defect states at silicon surfaces," Physica B, 274 (1999).
G. Masini, L. Colace, G. Assanto, H. C. Luan, K. Wada and L. C. Kimerling, "High
responsitivity near infrared Ge photodetectors integrated on Si," Electronics Letters, 35 17 (1999).
L. C. Kimerling,
"Silicon materials engineering for the next millennium," Solid State Phenomena, 70 (1999).
T. Gregorkiewicz, D. T. X. Thao, I. Tsimperidis, H. Bekman, C. Langerak, J. Michel
and L. C. Kimerling, "Excitation mechanism of Er in Si studied with a free-electron
laser," Light Emission from Silicon: Progress Towards Si-Based Optoelectronics, 77 (1999).
V. V. Emtsev, D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel and L. C.
Kimerling, "Impurity effects in silicon implanted with rare-earth
ions," Physica B, 274 (1999).
V. V. Emtsev, V. V. Emtsev, D. S. Poloskin, N. A. Sobolev, E. I. Shek, J. Michel and
L. C. Kimerling, "Impurity centers in silicon doped with rare-earth
impurities of dysprosium, holmium, erbium and ytterbium," Semiconductors, 33 6 (1999).
V. V. Emtsev, V. V. Emtsev, D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel and
L. C. Kimerling, "Rare earth impurities and impurity-related centers in
silicon," Solid State Phenomena,
70 (1999).
V. V. Emtsev, V. V. Emtsev, D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel and
L. C. Kimerling, "Oxygen and Erbium related donor centers in Czochralski
grown silicon implanted with erbium," Semiconductors,
33 10 (1999).
V. V. Emtsev, V. V. Emtsev, D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel and
L. C. Kimerling, "Impurity effects in silicon implanted with rare-earth
ions," Physica B, 274 (1999).
T. D. Chen, M. Platero, M. Opher-Lipson, J. Palm, J. Michel and L. C. Kimerling, "The
temperature dependence of radiative and nonradiative processes at Er-O centers
in Si," Physica B, 274 (1999).
K. M. Chen, A. W. Sparks, H. C. Luan, D. R. Lim, K. Wada and L. C. Kimerling,
"SiO2/TiO2 omnidirectional reflector and microcavity resonator via the
sol-gel method," Applied Physics
Letters, 75 24 (1999).
R. B. Capaz, L. V. C. Assali, L. C. Kimerling, K. Cho and J. D. Joannopoulos,
"Mechanism for hydrogen-enhanced oxygen diffusion in silicon," Physical Review B, 59 7 (1999).
R. B. Capaz, L. V. C. Assali, L. C. Kimerling, K. Cho and J. D. Joannopoulos, "Ab
initio studies of hydrogen-enhanced oxygen diffusion in silicon," Brazilian Journal of Physics, 29 4 (1999).
A. Agarwal, J. S. Foresi, L. M. Giovane, L. Liao, J. Michel, K. Wada and L. C. Kimerling,
"Defect engineering for silicon microphotonics," Proceedings of the Third International Symposium on Defects in Silicon,
99 1 (1999).
S. Zhao and L. C. Kimerling, "Defect reactions induced by reactive ion etching," Semiconductor Process and Device Performance
Modelling, 490 (1998).
K. Wada, H. Nakanishi, K. Yamada and L. C. Kimerling, "Electronically enhanced
reaction of process-induced defects in GaAs," Defect and Impurity Engineered Semiconductors Ii, 510 (1998).
A. L. Smith, S. H. Ahn and L. C. Kimerling, "A gettering simulator: Polished wafers and
p/p(++) epilayers," Silicon Materials Science and Technology, Vols 1 and 2, (1998).
G. J. Norga, M. Platero, K. A. Black, A. J. Reddy, J. Michel and L. C. Kimerling,
"Detection of metallic contaminants on silicon by surface sensitive
minority carrier lifetime measurements," Journal of the Electrochemical Society, 145 7 (1998).
J. Michel, L. V. C. Assali, M. T. Morse and L. C. Kimerling, "Erbium in
silicon," Light Emission in Silicon:
from Physics to Devices, 49 (1998).
E. Little, H. A. Haus, J. S. Foresi, L. C. Kimerling, E. P. Ippen and D. J. Ripin,
"Wavelength switching and routing using absorption and resonance," Ieee Photonics Technology Letters, 10 6 (1998).
E. Little, J. S. Foresi, G. Steinmeyer, E. R. Thoen, S. T. Chu, H. A. Haus, E. P. Ippen,
L. C. Kimerling and W. Greene, "Ultra-compact Si-SiO2 microring resonator optical channel dropping filters," Ieee Photonics Technology Letters, 10 4 (1998).
B. Little, H. Haus, E. Ippen, G. Steinmeyer, E. Thoen, J. Foresi, L. Kimerling, S. T. Chu and W. Greene, "Microresonators for Integrated Optical Devices," Optics and Photonics News, 9 12 (1998).
L. C. Kimerling, "The Economics of Science: From Photons to Products," Optics and Photonics News, 9 10 (1998).
T. Gregorkiewicz, D. T. X. Thao, I. Tsimperidis, H. H. P. T. Bekman, C. J. G. M.
Langerak, J. Michel and L. C. Kimerling, "Excitation mechanism of Er in Si
studied with a free-electron laser," Journal
of Luminescence, 80 1-4 (1998).
L. M. Giovane, D. R. Lim, S. H. Ahn, T. D. Chen, J. S. Foresi, L. Liao, E. J.
Oulette, A. M. Agarwal, X. Duan, J. Michel, A. Thilderkvist and L. C.
Kimerling, "Materials for monolithic silicon microphotonics," Materials and Devices for Silicon-Based
Optoelectronics, 486 (1998).
T. D. Chen, A. M. Agarwal, L. M. Giovane, J. S. Foresi, L. Liao, D. R. Lim, M. T. Morse, E. J. Ouellette, S. H. Ahn, X. M. Duan, J. Michel and L. C. Kimerling, "Erbium-doped silicon light emitting devices," Proc. SPIE 3279, 136 (1998).
S. Zhao, A. L. Smith, S. H. Ahn, G. J. Norga, M. T. Platero, H. Nakashima, L. V. C. Assali,
J. Michel and L. C. Kimerling, "Iron in p-type silicon: A comprehensive model," Defects in Semiconductors – Icds-19, Pts 1-3, 258-2 (1997).
S. Zhao, A. M. Agarwal, J. L. Benton, G. H. Gilmer and L. C. Kimerling, "Interstitial
defect reactions in silicon," Defects in Electronic Materials Ii, 442 (1997).
A. J. Reddy, G. J. Norga, A. S. Park, A. L. Smith, J. Michel, L. C. Kimerling, B. Parekh, J.
H. Shyu and E. Deane, "In-situ monitoring of HF reprocessing in an industrial scale recirculator bath," Environmental,
Safety and Health Issues in Ic Production, 447 (1997).
J. Reddy, T. A. Burr, J. K. Chan, G. J. Norga, J. Michel and L. C. Kimerling, "Silicon
surface defects: The roles of passivation and surface contamination," Defects in Semiconductors – Icds-19, Pts 1-3,
258-2 (1997).
G. J. Norga, M. Platero, K. A. Black, A. J. Reddy, J. Michel and L. C. Kimerling,
"Mechanism of copper deposition on silicon from dilute hydrofluoric acid
solution," Journal of the Electrochemical Society, 144 8 (1997).
J. Michel, A. J. Reddy, G. J. Norga, M. Platero and L. C. Kimerling, "In-situ
determination of Si wafer contamination using photoconductance decay measurements,"
Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and
Devices, 97 12 (1997).
J. Michel, J. Palm, T. Chen, X. Duan, E. Ouellette, S. H. Ahn, S. F. Nelson and L. C.
Kimerling, "Energy transfer processes at erbium ions in silicon," Defects in Semiconductors – Icds-19, Pts 1-3,
258-2 (1997).
L. C. Kimerling, K. D. Kolenbrander, J. Michel and J. Palm, "Light emission from
silicon," Solid State Physics – Advances in Research and Applications, Vol 50, 50 (1997).
L. C. Kimerling, "Design: New material challenge for silicon ULSI," Solid State Phenomena, 57-8 (1997).
L. M. Giovane, L. Liao, D. R. Lim, A. M. Agarwal, E. A. Fitzgerald and L. C.
Kimerling, "Si0.5Ge0.5 relaxed buffer photodetectors and low-loss
polycrystalline silicon waveguides for integrated optical interconnects at
lambda=1.3 mu m," Silicon-Based Monolithic and Hybrid Optoelectronic Devices, 3007 (1997).
J. S. Foresi, P. R. Villeneuve, J. Ferrera, E. R. Thoen, G. Steinmeyer, S. Fan, J. D.
Joannopoulos, L. C. Kimerling, H. I. Smith and E. P. Ippen,
"Photonic-bandgap microcavities in optical waveguides," Nature, 390 6656 (1997).
X. Duan, J. Palm, B. Zheng, M. Morse, J. Michel and L. C. Kimerling, "Defects in
erbium/oxygen implanted silicon," Defects in Electronic Materials Ii, 442 (1997).
S. H. Ahn, S. Zhao, A. L. Smith, L. L. Chalfoun, M. Platero, H. Nakashima and L. C.
Kimerling, "Gettering of Fe by aluminum in p-type Cz silicon," Defects in Electronic Materials Ii, 442 (1997).
A. Thilderkvist, J. Michel, S. T. Ngiam, L. C. Kimerling and K. D. Kolenbrander, "Room
temperature emission from erbium nanoparticles embedded in a silicon
matrix," Surface/Interface and Stress Effects in Electronic Materials Nanostructures, 405 (1996).
J. Palm, F. Gan, B. Zheng, J. Michel and L. C. Kimerling, "Electroluminescence of
erbium-doped silicon," Physical Review B, 54 24 (1996).
Morse, B. Zheng, J. Palm, X. Duan and L. C. Kimerling, "Properties of ion implanted and UHV-CVD grown Si:Er," Rare Earth
Doped Semiconductors Ii, 422 (1996).
J. Michel, B. Zheng, J. Palm, E. Ouellette, F. Gan and L. C. Kimerling, "Erbium doped silicon for light emitting devices," Rare
Earth Doped Semiconductors Ii, 422 (1996).
L. C. Kimerling, J. Michel, H. Msaad and G. J. Norga, "Microdefect analysis of
silicon: Tools and strategies," Semiconductor Characterization, (1996).
J. S. Foresi, M. R. Black, A. M. Agarwal and L. C. Kimerling, "Losses in
polycrystalline silicon waveguides," Applied Physics Letters, 68 15 (1996).
L. Chalfoun, G. Norga, S. Zhao and L. C. Kimerling, "In-line materials quality monitor
for crystalline silicon solar cell fabrication," 13th Nrel Photovoltaics Program Review, 353 (1996).
A. M. Agarwal, L. Liao, J. S. Foresi, M. R. Black, X. M. Duan and L. C. Kimerling,
"Low-loss polycrystalline silicon waveguides for silicon photonics," Journal of Applied Physics, 80 11 (1996).
M. Agarwal, M. R. Black, J. S. Foresi, L. Liao, Y. P. Liu and L. C. Kimerling,
"Polysilicon waveguides for silicon photonics," Polycrystalline Thin Films: Structure, Texture, Properties and
Applications Ii, 403 (1996).
S. Zhao, L. V. C. Assali and L. C. Kimerling, "The structure and bonding of
iron-acceptor pairs in silicon," Icds-18 – Proceedings of the 18th International Conference on Defects in
Semiconductors, Pts 1-4, 196- (1995).
K. Wada, H. Nakanishi and L. C. Kimerling, "Reactivation of Si donors and Zn acceptors
in plasma-irradiated GaAs by reverse BiAs annealing," Icds-18 – Proceedings of the 18th International Conference on Defects
in Semiconductors, Pts 1-4, 196- (1995).
J. Palm and L. C. Kimerling, "Defects and future silicon technology," Defect and Impurity Engineered Semiconductors
and Devices, 378 (1995).
G. J. Norga and L. C. Kimerling, "Metal Removal from Silicon Surfaces in Wet
Chemical-Systems," Journal of Electronic Materials, 24 4 (1995).
G. J. Norga, M. R. Black, K. A. Black, H. Msaad, J. Michel and L. C. Kimerling, "High
sensitivity detection of silicon surface reactions by photoconductance
decay," Icds-18 – Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, 196- (1995).
G. J. Norga, K. A. Black, H. Msaad, J. Michel and L. C. Kimerling, "Simulation and
In-Situ Monitoring of Metallic Contamination and Surface Roughening in Wet
Wafer Cleaning Solutions," Materials Science and Technology, 11 1 (1995).
H. Msaad, J. Michel, A. Reddy and L. C. Kimerling, "Monitoring and Optimization of
Silicon Surface Quality," Journal of the Electrochemical Society, 142 8 (1995).
J. Michel, J. Palm, F. Gan, F. Y. G. Ren, B. Zheng, S. T. Dunham and L. C. Kimerling,
"Erbium in silicon: A defect system for optoelectronic integrated circuits," Icds-18 – Proceedings of
the 18th International Conference on Defects in Semiconductors, Pts 1-4, 196- (1995).
L. C. Kimerling, "The Journal Talks with 1994 TMS President Kimerling, Lionel
C.," Jom-Journal of the Minerals Metals & Materials Society, 47 2 (1995).
Gan, L. V. C. Assali and L. C. Kimerling, "Electronic structure of erbium centers in
silicon," Icds-18 – Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4, 196- (1995).
Frear, J. P. Hirth, J. K. Howard, L. C. Kimerling and B. Wessels, "Experts Consider the
Future of Electronic Materials," Jom-Journal of the Minerals Metals & Materials Society, 47 3 (1995).
Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson and J. M. Poate,
"Room-Temperature Sharp Line Electroluminescence at Lambda=1.54-Mu-M from
an Erbium-Doped, Silicon Light-Emitting Diode," Appl. Phys. Lett., 64 21 (1994).
Y. G. Ren, J. Michel, D. C. Jacobson, J. M. Poate and L. C. Kimerling,
"Fluorine-Enhanced Si-Er Light-Emission," Materials Synthesis and Processing Using Ion Beams, 316 (1994).
H. Msaad, G. J. Norga, J. Michel and L. C. Kimerling, "Defect Monitoring And Control
For Crystalline Silicon Processing," 12th Nrel Photovoltaic Program Review, 306 (1994).
H. Msaad, J. Michel, J. J. Lappe and L. C. Kimerling, "Electronic Passivation of
Silicon Surfaces by Halogens," Journal of Electronic Materials, 23 5 (1994).
J. Michel, F. Y. G. Ren, B. Zheng, D. C. Jacobson, J. M. Poate and L. C. Kimerling,
"The Physics and Application of Sier for Light-Emitting-Diodes," Proceedings of the 17th International
Conference on Defects in Semiconductors, Pts 1-3, 143- (1994).
N. Yassievich and L. C. Kimerling, "The Mechanisms of Electronic Excitation
of Rare-Earth Impurities in Semiconductors," Semiconductor Science and Technology, 8 5 (1993).
A. Rohatgi, E. R. Weber and L. C. Kimerling, "Opportunities in Silicon Photovoltaics
and Defect Control in Photovoltaic Materials," Journal of Electronic Materials, 22 1 (1993).
Y. G. Ren, J. Michel, Q. Sunpaduano, B. Zheng, H. Kitagawa, D. C. Jacobson, J. M. Poate
and L. C. Kimerling, "IC Compatible Processing of Si-Er for Optoelectronics," Silicon-Based
Optoelectronic Materials, 298 (1993).
Y. G. Ren, J. Michel, Q. Sunpaduano, B. Zheng, H. Kitagawa, D. C. Jacobson, J. M. Poate
and L. C. Kimerling, "IC Compatible Processing of Si-Er for Optoelectronics," Rare Earth Doped
Semiconductors, 301 (1993).
Michel, L.C. Kimerling, J. L. Benton, D. J. Eaglesham, E. A. Fitzgerald, D. C. Jacobson,
J. M. Poate, Y. H. Xie and R. F. Ferrante, "Dopant Enhancement of the 1.54
Mu-M Emission of Erbium Implanted in Silicon," Proceedings of the 16th International Conference on Defects in
Semiconductors, Pts 1-3, 83 (1992).
Michel, E.A. Fitzgerald, Y. H. Xie, P. J. Silverman, M. Morse and L. C. Kimerling,
"Photoluminescence Investigations of Graded, Totally Relaxed GexSi1-x
Structures," Journal of Electronic Materials, 21 12 (1992).
S. Mahajan and L. C. Kimerling, "Concise encyclopedia of semiconducting materials
& related technologies," 1st, Oxford ; New York, Pergamon Press, 1992.
Kitagawa, L C. Kimerling and S. Tanaka, "Iron-Related Levels in Normal-Type Silicon
Studied by Hall-Effect and DLTS Measurements," Journal of Electronic Materials, 21 8 (1992).
C. Kimerling, "Fundamentals of Semiconductor Processing," Crucial Issues in Semiconductor Materials and Processing Technologies,
222 (1992).
L. Benton, B. E. Weir, D. J. Eaglesham, R. A. Gottscho, J. Michel and L. C. Kimerling,
"Measurement of Defect Profiles in Reactive Ion Etched Silicon," Journal of Vacuum Science & Technology B,
10 1 (1992).
L. Benton, M. A. Kennedy, J. Michel and L. C. Kimerling, "Interstitial Defect
Reactions in Silicon Processed by Reactive Ion Etching," Proceedings of the 16th International
Conference on Defects in Semiconductors, Pts 1-3, 83 (1992).
A. Fitzgerald, P. E. Freeland, M. T. Asom, W. P. Lowe, R. A. Macharrie, B. E.
Weir, A. R. Kortan, F. A. Thiel, Y. H. Xie, A. M. Sergent, S. L. Cooper, G. A.
Thomas and L. C. Kimerling, "Epitaxially Stabilized GexSn1-x Diamond Cubic
Alloys," Journal of Electronic Materials, 20 6 (1991).
J. Eaglesham, J. Michel, E. A. Fitzgerald, D. C. Jacobson, J. M. Poate, J. L.
Benton, A. Polman, Y. H. Xie and L. C. Kimerling, "Microstructure of
Erbium-Implanted Si," Applied Physics Letters, 58 24 (1991).
Chou, H. S. Chen, A. R. Kortan, L. C. Kimerling, F. A. Thiel and M. K. Wu, "Processing
of a Tlba2Ca2Cu3Oy Superconducting Film by Liquid-Gas Solidification," Appl. Phys. Lett., 58 24 (1991).
J. L.Benton, J. Michel, L. C. Kimerling, B. E. Weir and R. A. Gottscho, "Carbon
Reactions in Reactive Ion Etched Silicon," Journal of Electronic Materials, 20 9 (1991).
J. L.Benton, J. Michel, L. C. Kimerling, D. C. Jacobson, Y. H. Xie, D. J. Eaglesham,
E. A. Fitzgerald and J. M. Poate, "The Electrical and Defect Properties of
Erbium-Implanted Silicon," Journal of Applied Physics, 70 5 (1991).
J. Sanchez,A. H. King, T. Sands, J. R. Lloyd and L. C. Kimerling, "Metallizations for
Electronics Applications – Forward," Journal of Electronic Materials, 19 11 (1990).
J. Michel, J. Jeong, K. M. Lee and L. C. Kimerling, "The Role of Oxygen in p-Type
InP," Impurities, Defects and Diffusion in Semiconductors : Bulk and Layered Structures, 163 (1990).
J. Michel, J. L. Benton, J. Jeong, K. M. Lee, E. M. Monberg and L. C. Kimerling,
"Oxygen Related Defect Reactions in InP," Journal of Electronic Materials, 19 7 (1990).
C.Kimerling, G. H. Gilmer and J. L. Benton, "The Diffusion of Iron in Silicon," Journal of Electronic
Materials, 19 7 (1990).
A. Katz, D. Maher, P. M. Thomas, B. E. Weir, W. C. Dautremontsmith and L. C. Kimerling,
"Microstructure, Stress and Electrical-Properties of the Highly Stable W/P+-In0.53Ga0.47As Ohmic Contacts," Beam-Solid Interactions : Physical Phenomena, 157 (1990).
Katz, W. C. Dautremontsmith, S. N. G. Chu, S. J. Pearton, M. Geva, B. E. Weir, P. M. Thomas
and L. C. Kimerling, "Process Design for Nonalloyed Contacts to InP-Based Laser Devices," Advanced
Metallization in Microelectronics, 181 (1990).
J. L.Benton, J. Michel, D. C. Jacobson, R. A. Gottscho and L. C. Kimerling,
"Carbon Reactions in Implanted and Reactive Ion Etched Silicon," Journal of Electronic Materials, 19 7 (1990).
K. E. Benson, L. C. Kimerling and P. T. Panousis, "Reaching the Limits in
Silicon Processing," AT&T Technical Journal, 69 6 (1990).
