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Please note: some years have no publications.
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Direct gap photoluminescence of n-type tensile-strained Ge-on-Si," Appl. Phys. Lett. (2009). (in press)
J. Liu, X. Sun, L. C. Kimerling, and J. Michel, "Direct band gap photoluminescence and optically enhanced transmittance of band engineered Ge-on-Si at room temperature," Optics Lett. (2009). (in press)
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Room temperature direct band gap electroluminesence from Ge-on-Si light emitting diodes," Optics Lett. 34,1198 (2009).
J. Hu, X. Sun, A. Agarwal, and L. C. Kimerling, "Design guidelines for optical resonator biochemical sensors" J. Opt. Soc. Am. B 26,1032 (2009).
J. Liu, X. Sun, Y. Bai, K. E. Lee, E. A. Fitzgerald, L. C. Kimerling, and J. Michel, "Efficient above-Band-Gap Light Emission in Germanium" Chinese Optics Lett. 7(4), 271-273 (2009). (invited)
L. Zeng, P. Bermel, Y. Yi, B. A. Alamariu, K. A. Broderick, J. Liu, C. Hong, X. Duan, J. Joannopoulos, "Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector" Applied Physics Letters 93,221105 (2008).
J. F. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling and J. Michel, "Waveguide-integrated, ultra-low energy GeSi electro-absorption modulators" Nature Photonics 2,433 (2008).
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, "Optical Bleaching of Thin Film Ge on Si" ECS Trans. 16, 881 (2008).
R. Sun, L. Wang, J. Cheng, L. C. Kimerling, M. Balseanu, L.-Q. Xia, and H.M'saad, "Monte Carlo Modeling on Composition Induced Tensile Stress in Hydrogenated PECVD Silicon Nitride" J. Applied Physics 104,094103 (2008).
T. Anderson, L. Petit, N. Carlie, J. Choi, J. Hu, A. Agarwal, L. C. Kimerling, K. Richardson, M. Richardson, "Femtosecond laser photo-response of Ge23Sb7S70 films" Opt. Express. 16,20081 (2008).
J. Hu, N. Carlie, N. Feng, L. Petit, A. Agarwal, K. Richardson, and L. C. Kimerling, "Planar waveguide-coupled, high-index-contrast, high-Q resonators in chalcogenide glass for sensing" Opt. Lett. 33,2500 (2008).
J. Wang, J. Hu, X. Sun, A. Agarwal, D. Lim, R. Synowicki, and L. C. Kimerling, "Structural, electrical and optical properties of thermally evaporated nanocrystalline PbTe films" J. Appl. Phys. 104,053707 (2008).
J. Hu, N. Carlie, L. Petit, A. Agarwal, K. Richardson, and L. C. Kimerling, "Demonstration of chalcogenide glass racetrack micro-resonators" Opt. Lett. 33,761 (2008).
R. Sun, M. Beals, A. Pomerene, J. Cheng, C.Y. Hong, L.C. Kimerling, and J. Michel, "Impedance matching vertical optical waveguide couplers for dense high index contrast circuits" Optics Express 16, 11682 (2007).
J. F. Liu, D. Pan, S. Jongthammanurak, K. Wada, L. C. Kimerling, and J. Michel, "Design of monolithically integrated GeSi electroabsorption modulators and photodetectors on an SOI platform" Optics Express 15, 623 (2007).
D. Ahn, C. Y. Hong, J. F. Liu, M. Beals, L. C. Kimerling, and J. Michel, "High performance, waveguide integrated Ge photodetectors" Optics Express 15, 3916 (2007).
N. N. Feng, J. Michel, L. Zeng, J. F. Liu, C. Y. Hong, L. C. Kimering, and X. Duan, "Design of highly efficient light-trapping structures for think-film crystalline silicon solar cells" IEEE Transactions on Electronic Devices 54, 1926 (2007).
D. D. Cannon, J. F. Liu, D. T. Danielson, S. Jongthammanurak, U. U. Enuha, K.i Wada, J. Michel, and L. C. Kimerling, "Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates" Applied Physics Letters 91, 252111 (2007).
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koth, and J. Michel, "Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si" Optics Express 15, 11272 (2007).
R. Sun, P. Dong, N.-N. Feng, C.-Y. Hong, J. Michel, M. Lipson, and L.C. Kimerling, "Horizontal single and multiple slot waveguides: optical transmission at ? = 1550 nm" Optics Express 15, 17967 (2007).
N.-N. Feng, R. Sun, L.C. Kimerling, and J. Michel, "Low-loss compact size slotted waveguide mode transformers" Optics Letters 32, 2131 (2007).
R. Sun, V. Nguyen, A. Agarwal, C.-Y. Hong, J. Yasaitis, L.C. Kimerling, and J. Michel, "High performance asymmetric graded index coupler with monolithically integrated lens for high index waveguides" Applied Physics Letters 90,201116 (2007).
N.-N. Feng, R. Sun, L.C. Kimerling, and J. Michel, "Lossless strip-to-slot waveguide transformer" Optics Letters 32,1250 (2007).
J. Hu, N. Feng, N. Carlie, J. Wang, L. Petit, A. Agarwal, K. Richardson, and L. C. Kimerling, "Low-loss high-index-contrast planar waveguides with graded-index cladding layers" Opt. Express 15,14566 (2007).
J. Hu, V. Tarasov, N. Carlie, N. Feng, L. Petit, A. Agarwal, K. Richardson, and L. C. Kimerling, "Si-CMOS-compatible lift-off fabrication of low-loss planar chalcogenide waveguides" Opt. Express 15,11798 (2007).
J. Hu, L. Petit, X. Sun, A. Agarwal, N. Carlie, T. Anderson, J. Choi, J. Viens, M. Richardson, K. Richardson, L. C. Kimerling, "Studies on Structural, Electrical and Optical Properties of Cu-doped As-Se-Te Chalcogenide Glasses" J. Appl. Phys. 101,063520 (2007).
J. Hu, V. Tarasov, N. Carlie, L. Petit, A. Agarwal, K. Richardson, and L. C. Kimerling, "Fabrication and Testing of Planar Chalcogenide Waveguide Integrated Microfluidic Sensor" Opt. Express 15,2307 (2007).
J. Hu, V. Tarasov, N. Carlie, L. Petit, A. Agarwal, K. Richardson, and L. C. Kimerling, "Exploration of Waveguide Fabrication From Thermally Evaporated Ge-Sb-S Glass Films" Opt. Mater 30,1560 (2007).
S. Jongthammanurak, J. F. Liu, K. Wada, D. D. Cannon , D. T. Danielson, D. Pan, L. C. Kimerling, J. Michel, "Large Electro-optic Effect in Tensile Strained Ge-on-Si Films" Applied Physics Letters, 89,161115 (2006).
X. Sun, J. Hu, C. Hong, J. Viens, R. Das, A. Agarwal, and L. C. Kimerling, "Multispectral pixel performance using a one-dimensional photonic crystal design" Applied Physics Letters, 89,223522 (2006).
Jussi Hiltunen, Dilan Seneviratne, Rong Sun, Michael Stolfi, Harry L. Tuller, Jyrki Lappalainen and Vilho Lantto, "BaTiO3-SrTiO3 multilayer thin film electro-optic waveguide modulator," Applied Physics Letters, 89(242904) 242904-1 (2006).
Luca Dal Negro, Jae Hyung Yi, Lionel C. Kimerling, Sebastien Hamel, Andrew Williamson and Giulia Galli, "Light-Emitting Silicon Nanocrystals and Photonic Structures in Silicon Nitride,"IEEE J. Select. Topics Quantum Electron. 12(6) 1628-1635 (2006).
Luca Dal Negro, Sebastien Hamel, Natalia Zaitseva, Jae Hyung Yi , Andrew Williamson, Michael Stolfi, Jurgen Michel, Giulia Galli and Lionel C. Kimerling, "Synthesis, Characterization and Modeling of Colloidal and Thin Film Silicon Nanocrystals," IEEE J. Select. Topics Quantum Electron. 12(6) 1151-1163 (2006).
L. Dal Negro, J.H. Yi , M. Hiltunen, J. Michel, L.C. Kimerling, S. Hamel , A. Williamson, G. Galli, T.F. Chang, V. Sukhovatkin and E.H. Sargent, "Light-emitting silicon nitride systems and photonic structures," J. Exper. Nanoscience, 1(1) 29-50 (2006).
Ning-Ning Feng, Jurgen Michel and Lionel C. Kimerling, "Optical field concentration in low-index waveguides," IEEE Journal of Quantum Electronics, 42 (9) 883-888 (September, 2006).
L. Zeng, Y. Yi, C.-Y. Hong, J. Liu, N.-N. Feng, X. Duan, L.C. Kimerling and B.A. Alamariu, "Efficiency enhancement in Si solar cells by textured photonic crystal back reflector," Applied Physics Letters, 89 (111111) 111111-1 (September, 2006).
L. Dal Negro, J.H. Yi, J. Michel, L.C. Kimerling, T.-W.F. Chang, V. Sukhovatkin and E.H. Sargent, "Light emission efficiency and dynamics in silicon-rich silicon nitride films," Applied Physics Letters, 88 (23) 233109 (June 5, 2006).
K. Wada, D.H. Ahn, D.R. Lim, J. Michel andL.C. Kimerling, "Si microphotonics for optical interconnection," Thin Solid Films, 508 (1-2) 418-421 (June 5, 2006).
Oluwamuyiwa O. Olubuyide, David T. Danielson, Lionel C. Kimerling, Judy L. Hoyt, "Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition," Thin Solid Films, 508 (1-2) 14-19 (June 5, 2006).
L. Dal Negro, J.H. Yi, L.C. Kimerling, S. Hamel, A. Williamson, G. Galli, "Light emission from silicon-rich nitride nanostructures," Applied Physics Letters, 88 (18) 183103 (May 1, 2006).
Lorenzo Colace, Michele Balbi, Gianlorenzo Masini, Gaetano Assanto, Hsin-Chiao Luan, Lionel C. Kimerling, "Ge on Si p-i-n photodiodes operating at 10 Gbits," Applied Physics Letters, 88 (10) 101111 (2006).
Victor Nguyen, Trisha Montalbo, Christina Manolatou, Anu Agarwal, Ching-Yin Hong, John Yasaitis, L.C. Kimerling, Jurgen Michel, "Silicon-based highly-efficient fiber-to-waveguide coupler for high index contrast system," Applied Physics Letters, 88 (8) 081112 (2006).
2005
Jifeng Liu, Jurgen Michel, Wojciech Giziewicz, Dong Pan, Kazumi Wada, Douglas D. Cannon, Samerkhae Jongthammanurak, David T. Danielson, Lionel C. Kimerling, Jian Chen, F. Omer Ilday, Franz X. Kartner, John Yasaitis, "High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform," Applied Physics Letters, 87 (10) 103501 (Sept. 5, 2005).
Daniel K. Sparacin, Ching-Yin Hong, Lionel C. Kimerling, Jurgen Michel, John P. Lock, Karen K. Gleason, "Trimming of microring resonators by photo-oxidation of a plasma-polymerized organosilane cladding material," Optics Letters, 30 (17) 2251-2253 (Sept. 1, 2005).
Daniel K. Sparacin, Steven J. Spector, Lionel C. Kimerling, "Silicon waveguide sidewall smoothing by wet chemical oxidation," Journal of Lightwave Technology, 23 (8) 2455-2461 (August, 2005).
Jifeng Liu, Douglas D. Cannon, Kazumi Wada, Yasuhiko Ishikawa, Samerkhae Jongthammanurak, David T. Danielson, Jurgen Michel, Lionel C. Kimerling, "Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications," Applied Physics Letters, 87 (1) 011110 (July 4, 2005),
Yasuhiko Ishikawa, Kazumi Wada, Jifeng Liu, Douglas D. Cannon, Hsin-Chiao Luan, Jurgen Michel, Lionel C. Kimerling, "Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate," Journal of Applied Physics, 98 (1) 013501 (July 1, 2005).
S. Akiyama, Felix J. Grawert, J. Liu, K. Wada, G.K. Celler, L.C. Kimerling, F.X. Kaertner, "Fabrication of highly reflecting epitaxy-ready Si-SiO2 Bragg reflectors," IEEE Photonics Technology Letters, 17 (7) 1456-1458 (July, 2005).
Shoji Akiyama, Milos A. Popovic, Peter T. Rakich, Kazumi, Wada, Jurgen Michel, Hermann A. Haus, Erich P. Ippen, Lionel C. Kimerling, "Air trench bends and splitters for dense optical integration in low index contrast," Journal of Lightwave Technology, 23 (7) 2271-2277 (July, 2005).
L. Dal Negro, J.H. Yi, V. Nguyen, Y. Yi, J. Michel, L.C. Kimerling, "Spectrally enhanced light emission from aperiodic photonic structures," Applied Physics Letters, 86 (26) 261905 (June 27, 2005).
Kevin K. Lee, Desmond R. Lim, Dong Pan, Christian Hoepfner, Wang-Yuhl Oh, Kazumi Wada, Lionel C. Kimerling, Kuan Pei Yap, My The Doan, "Mode transformer for miniaturized optical circuits," Optics Letters, 30 (5) 498-500 (March 1, 2005).
F.J. Grawert, J.T. Gopinath, F.O. Ilday, H.M. Shen, E.P. Ippen, F.X. Kartner, S. Akiyama, J. Liu, K. Wada, L.C. Kimerling, "220-fs erbium-ytterbium:glass laser mode locked by a broadband low-loss silicon/germanium saturable absorber," Optics Letters, 30 (3) 329-331 (Feb. 1, 2005).
Olufemi I. Dosunmu, Douglas D. Cannon, Matthew K. Emsley, Lionel C. Kimerling, M. Selim Unlu, "High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation," IEEE Photonics Technology Letters, 17 (1), 175-177 (January, 2005).
2004
D.D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D.T. Danielson, S. Jongthammanurak, J. Michel, and L.C. Kimerling, "Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications," Applied Physics Letters, 84 (6) 906 (2004).
J. Liu, Douglas D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D.T. Danielson, J. Michel, and L.C. Kimerling, "Silicidation-induced band gap shrinkage in Ge epitaxial films on Si," Applied Physics Letters, 84 (5) 660 (2004).
Jifeng Liu, Douglas D. Cannon, Kazumi Wada, Yasuhiko Ishikawa, David T. Danielson, Samerkhae Jongthammanurak, Jurgen Michel and Lionel C. Kimerling, "Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100)," Physical Review B 70 (155309) 155309-1 (2004).
Yasha Yi, Shoji Akiyama, Peter Bermel, Xiaoman Duan, and Lionel C. Kimerling, "On-chip Si-based Bragg cladding waveguide with high index contrast bylayers," Optics Express 12 (20) 4775-4780 (2004).
2003
L.C. Kimerling, "Silicon Microphotonics: the Next Killer Technology," in Towards the First Silicon Lasers, L. Pavesi, et al., Eds. (Kluwer Academic Publishers, Boston, 2003) pp. 465-476.
Y. Ishikawa, K. Wada, D.D. Cannon, J. Liu, H.-C. Luan, and L.C. Kimerling, "Strain-induced band gap shrinkage in Ge grown on Si substrate," Applied Physics Letters, 82 (13) 2044 (2003).
L.C. Kimerling, "Silicon Microphotonics," in Interconnect Technology and Design for Gigascale Integration, J. Davis and J.D. Miendl, Eds. (Kluwer Academic Publishers, Boston, 2003) p. 383.
L.V.C. Assili, F. Gan, L.C. Kimerling, and J.F. Justo, "Electronic structure of light emitting centers in Er doped Si," Applied Physics A, 76 (6) 991 (2003).
S. Saini, J. Michel and L.C. Kimerling, "Index contrast scaling for optical amplifiers," Journal of Lightwave Technology, 21 (10) 2368 (2003).
G. Taraschi, S. Saini, W.W. Fan, L.C. Kimerling and E.A. Fitzgerald, "Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25 O2/Si0.75Ge0.25 using various H2 pressures," Journal Applied Physics, 93 (12) 9988 (2003).
H. Kageshima, A. Taguchi, and K. Wada, "Formation of stable N-V-O complexes in Si," Physica B, 340-342 626 (2003).
2002
L.C. Kimerling, "Microphotonics: the next platform for the Information Age," in Micro-electronics: Materials, Devices and Integration, M. Ferrari, L. Pavesi, and G.C. Righini, Eds. Collana Quaderni di Ottica e Fotonica (Centro Editoriale Toscano 2002 Firenze) pp. 1-20.
Y. Yi, P. Bermel, K. Wada, X. Duan, J. Joannopoulos, and L.C. Kimerling, "Tunable multichannel optical filter based on silicon photonic band gap materials actuation," Virtual Journal of Nanoscale Science & Technology, 81 (22) 4112 (2002). Invited.
Y. Yi, P. Bermel, K. Wada, X. Duan, J. Joannopoulos, and L.C. Kimerling, "Tunable multichannel optical filter based on silicon photonic band gap materials actuation," Applied Physics Letters, 81 (22) 4112 (2002).
Milos Popovic, K. Wada, S. Akiyama, H.A. Haus, and J. Michel, "Air trenches for sharp silica waveguide bends," Journal of Lightwave Technology, 20 1762 (2002).
2001
L. Giovane, H.-C. Luan, A. Agarwal and L.C. Kimerling, "Correlation between leakage current density and threading dislocation density in SiGe pin diodes grown on relaxed graded buffer layers," Applied Physics Letters, 78 (4) 541 (2001).
G. Masini, L. Colace, G. Assanto, H.-C. Luan and L.C. Kimerling, "High performance pin Si photodetectors for the near infrared: From model to demonstration," IEEE Transactions on Electron Devices, 48 (6) 1092 (2001).
S. Zhao, L.V.C. Assali, J.F. Justo, G.H. Gilmer, and L.C. Kimerling, "Iron-acceptor pairs in silicon: Structure and formation processes," Journal of Applied Physics, 90 (6) 2744 (2001).
K.K. Lee, D.R. Lim, and L.C. Kimerling, "Fabrication of ultralow-loss Si/SiO 2 waveguides by roughness reduction," Optics Letters, 26 (23) 1888 (2001).
A.J. Reddy, J. Michel, and L.C. Kimerling, "Oberservation of two coupled defect levels on the hydrogen-passivated Si (100) surface," Physica B, 308-310 228 (2001).
G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L.C. Kimerling, "Germanium on silicon pin photodiodes for the near infrared," Electronic Letters, 36 (25) 2095 (2000).
T.D. Chen, A.M. Agarwal, A. Thilderkvist, J. Michel, and L.C. Kimerling, "Erbium-doped polycrystalline silicon for light emission at ?=1.54µm," Journal of Electronic Materials, 29 (7) 973 (2000).
L. Liao, D. Lim, A.M. Agarwal, X. Duan, K. Lee, and L.C. Kimerling, "Optical transmission losses in polycrystalline silicon strip waveguides: effects of waveguide dimensions, thermal treatment, hydrogen passivation, and wavelength," Journal of Electronic Materials, 29 (12) 1380 (2000).
J.A. Greer, D.B. Fenner, J. Hautala, L.P. Allen, V. DiFilippo, N. Toyoda, I. Yamada, J. Matsuo, E. Minami, and H. Katsumata, "Etching, smoothing, and deposition with gas-cluster ion beam technology," Surface and Coatings Technology, 133 273 (2000).
L.C. Kimerling, "Silicon Microphotonics," Applied Surface Science, 159-160 8 (2000).
M. Lipson, T.D. Chen, D.R. Lim, A. Luan, A. Agarwal, J. Michel, K. Wada, and L.C. Kimerling, "Er 3+ -photon interaction," Journal of Luminescence 87-89 323 (2000).
J.-P. Laine, B.E. Little, D.R. Lim, H.C. Tapalian, L.C. Kimerling, and H.A. Haus, "Microsphere resonator mode characterization by pedestal anti-resonant reflecting waveguide coupler," IEEE Photonics Technology Letters, 12 (8) 1004 (2000).
M. Lipson and L.C. Kimerling, "Er 3+ in strong light-confining microcavity," Applied Physics Letters, 76 (8) 1150 (2000).
L. Colace, G. Masini, G. Assanto, H.-C. Luan, K. Wada, and L.C. Kimerling, "Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates," Applied Physics Letters, 76 (10) 1231 (2000).
K.K. Lee, D.R. Lim, H.-C. Luan, A. Agarwal, J. Foresi, and L.C. Kimerling, "The effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model," Applied Physics Letters, 77 pp. 1617, 2258 (2000).
A.L. Smith, K. Wada, and L.C. Kimerling, "Modeling of transition metal redistribution to enable wafer design for gettering," Journal of the Electrochemical Society, 147 (3) 1154-1160 (2000).
A.J. Reddy, J. Michel, B. Parekh, J.-H. Shyu, and L.C. Kimerling, "In-Situ detection of trace levels of copper in hydrofluoric acid," Journal of the Electrochemical Society, 147 (6) 2337 (2000).
L.C. Kimerling, "Photons to the rescue: Microelectronics becomes microphotonics," Interface, 9 (2) 28 (2000).
K.M. Chen, X.P. Jiang, L.C. Kimerling, and P.T. Hammond, "Selective self-organization of colloids on patterned polyelectrolyte templates," Langmuir 16 (20) 7825 (2000).
1999
H.S. Luan, K. Wada, L.C. Kimerling, G. Masini, L. Colace, and G. Assanto, "High responsivity near infrared Ge photodetectors integrated on Si," Electronics Letters, 17 (35) 1467 (1999).
S.F. Chichibu, A.C. Abare, M.P. Mack, M.S. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S.B. Fleischer, S. Keller, J.S. Speck, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren, S.P. DenBaars, K. Wada, T. Sota, and S. Nakamura, "Optical properties of InGaN quantum wells," Materials Science & Engineering B, 59 298 (1999).
K. Wada and L.C. Kimerling, "Si-LSIs and microphotonics," Oyo Buturi, 68 (9) 1034 (1999).
L.C. Kimerling, "Devices for Si microphotonic interconnection: Photonic crystals, waveguides and Si optoelectronics," 57th Annual Device Research Conference Digest, IEEE, New York 108 (1999).
H.-C. Luan, D.R. Lim, K.K. Lee, K.M. Chen, J.G. Sandland, K. Wada, and L.C. Kimerling, "High quality Ge epilayers on Si with low threading-dislocation densities," Applied Phyics Letters, 75 (19) 2909 (1999).
K.M. Chen, A.W. Sparks, H.-C. Luan, K. Wada, and L.C. Kimerling, "SiO2/TiO2 ominidirectional reflector and microcavity resonator via the sol-gel method," Applied Physics Letters, 75 (24) 3805 (1999).
J. Michel, L.C. Kimerling, V.V. Emtsev, V.V. Emstev, Jr., D.S. Poloskin, E.I. Shek and N.A. Sobolev, "Oxygen and erbium related donor centers in Czochralski grown silicon implanted with erbium," Semiconductors, 33 (10) 1084 (1999).
A.L. Smith, S.T. Dunham, and L.C. Kimerling, "Transition metal defect behavior and Si density of states in the processing temperature regime," ICDS-20, Berkeley, Physica B, 273-274 358 (1999).
A.J. Reddy, J.V. Chan, T.A. Burr, R. Mo, C.P. Wade, C.E.D. Chidsey, J. Michel, and L.C. Kimerling, "Defect states at silicon surfaces," ICDS-20, Berkeley, Physica B, 273-274 468 (1999).
T.D. Chen, M. Platero, M. Opher-Lipson, J. Palm, J. Michel, and L.C. Kimerling, "The temperature dependence of radiative and nonradiative processes at Er-O centers in Si," ICDS-20, Berkeley Physica B, 273-274 322 (1999).
1998
E.A. Fitzgerald and L.C. Kimerling, "Silicon-based microphotonics and integrated optoelectronics," MRS Bulletin, 23 (4) 39 (1998).
B.E. Little, J.S. Foresi, G. Steinmeyer, E.R. Thoen, S.T. Chu, H.A. Haus, E.P. Ippen, L.C. Kimerling, and W. Greene, "Ultra-compact Si-SiO 2 microring resonator optical channel dropping filters," IEEE Photonics Technology Letters, 10 (4) 549 (1998).
B.E. Little, H.A. Haus, J.S. Foresi, L.C. Kimerling, E.P. Ippen, and D.J. Ripin, "Wavelength switching and routing using absorption and resonance," IEEE Photonics Technology Letters, 10 (6) 816 (1998).
G.J. Norga, M. Platero, K.A. Black, A.J. Reddy, J. Michel, and L.C. Kimerling, "Detection of metallic contaminants on silicon by surface sensitive minority carrier lifetime measurements," Journal of the Electrochemical Society, 145 (7) 2602 (1998).
L.C. Kimerling, "The economics of science: From photons to products," Optics & Photonics News, 9 (10) 19 (October 1998).
B. Little, H. Haus, E. Ippen, G. Steinmeyer, and E. Thoen, "Microresonators for Integrated Optical Devices," Optics & Photonics News, 12 32 (October 1998).
1997
J. Michel, J. Palm, K.D. Kolenbrander, and L.C. Kimerling, "Light emission from silicon," Solid State Physics, 50 333 (1997).
J. Michel, A.J. Reddy, G.J.Norga, M. Platero, and L.C. Kimerling, "In-situ determination of Si wafer contamination using photoconductance decay measurements," Journal of the Electrochemical Society, PV97-12 58 (1997).
G.J. Norga, M. Platero, K.A. Black, A.J. Reddy, J. Michel, and L.C. Kimerling, "Mechanism of Copper Deposition on silicon from dilute hydrofluoric acid solution," Journal of the Electrochemical Society, 144 :8 2801 (1997).
S. Zhao, A.L. Smith, S.H. Ahn, G.J. Norga, M.T. Platero, H. Nakashima, L.V.C. Assali, J. Michel, and L.C. Kimerling, "Iron in p-type silicon: A comprehensive model," Materials Science Forum, 258-263 429 (1997).
J.Michel, J. Palm, T. Chen, X. Duan, E. Ouellette, S.H. Ahn, S.F. Nelson, and L.C. Kimerling, "Energy transfer processes of erbium ions in silicon," Materials Science Forum, 258-263 1485 (1997).
A.J. Reddy, T. Burr, J.K. Chan, G.J. Norga, J. Michel, L.C. Kimerling, "Silicon surface defects: The roles of passivation and surface contamination," Materials Science Forum, 258-263 1719 (1997).
J.S. Foresi, P.R. Villeneuve, J. Ferrera, E.R. Thoen, G. Steinmeyer, S. Fan, J.D. Joannopoulos, L.C. Kimerling, H.I. Smith and E.P.Ippen, "Photonic bandgap microcavities in optical waveguides," Nature, 390 143 (13 Nov 1997).
B. Little, S.T. Chu, H. Haus, J. Foresi, and J.P. Laine, "Microring resonator channel dropping filters," Journal of Lightwave Technology, 15 998 (June 1997).
1996
J. Palm, F. Gan, B. Zheng, J. Michel, and L.C. Kimerling, "On the electroluminescence of erbium doped silicon," Physical Review Bulletin, 54 (24) 603 (1996).
A. Agarwal, K.A. Black, J. Foresi, L. Liao, X. Duan, and L.C. Kimerling, "Low-Loss Polycrystalline silicon Waveguides for silicon Photonic," Journal of Applied Physics, 80 (11) 6120 (1996).
J. Foresi, M.R. Black, A. Agarwal, and L.C. Kimerling, "Losses in Polycrystalline silicon Waveguides," Applied Physics Letters, 68 (15) 2052 (1996).
1995
G.J. Norga and L.C. Kimerling, "Metal Removal from silicon surfaces in wet chemical systems," Journal of Electronic Materials, 24 397 (1995).
G.J. Norga, K.A. Black, H. M'saad, J. Michel, and L.C. Kimerling, "Simulation and in-situ monitoring of metallic contamination and surface roughening in wet wafer cleaning solutions," Materials Science and Technology, 11 90 (1995).
F. Gan, L.V.C. Assali, and L.C. Kimerling, "Electronic structure of erbium centers in silicon," Materials Science Forum, 197 579 (1995).
J. Michel, J. Palm, F. Gan, F.Y.G. Ren, B. Zheng, S.T. Dunham, and L.C. Kimerling, "Erbium in silicon: A defect system for optoelectronic integrated circuits," Materials Science Forum, 197 585 (1995).
K. Wada, H. Nakashima, and L.C. Kimerling, "Reactivation of Si donors and Zn acceptors in plasma-irradiated GaAs by reverse bias annealing," Materials Science Forum, 197 1401( 1995).
S. Zhao, L.V.C. Assali, and L.C. Kimerling, "The structure and bonding of iron-acceptor pairs in silicon," Materials Science Forum, 198 1333 (1995).
G.J. Norga, M.R. Black, K.A. Black, H. M'saad, J. Michel, and L.C. Kimerling, "High sensitivity detection of silicon surface reactions by photoconductance decay," Materials Science Forum, 199 1531 (1995).
1994
J. Michel, F.Y.G. Ren, B. Zheng, D.C. Jacobson, J.M. Poate, and L.C. Kimerling, "The physics and application of Si:Er for light emitting diodes," Materials Science Forum, 143-147 707 (1994)
H. M'saad, J. Michel, J.J. Lappe, and L.C. Kimerling, "Electronic passivation of silicon surfaces by halogens," Journal of Electronic Materials, 23 487 (1994).
B. Zheng, J. Michel, F.Y.G. Ren, D.C. Jacobson, J.M. Poate, and L.C. Kimerling, "Room temperature sharp line electroluminescence at ? = 1.54 µm from an erbium-doped, silicon light-emitting diode," Applied Physics Letters, 64 2842 (1994).
1993
A. Rohatgi, E.R. Weber, and L.C. Kimerling, "Opportunities in silicon photovoltaics and defect control in photovoltaic materials," Journal of Electronic Materials, 22 65 (1993).
I.N. Yassievich and L.C. Kimerling, "The mechanisms of electronic excitation of rare earth impurities in semiconductors," Semiconductor Science Technology, 7 1 (1993).
1992
J. Michel, L.C. Kimerling, J.L. Benton, D.J. Eaglesham, E. A Fitzgerald, D.C. Jacobson, J.M. Poate, Y.-H. Xie, and R. F. Ferrante, "Dopant enhancement of the 1.54 µm emission of erbium implanted in silicon," Materials Science Forum, 83-87 653 (1992).
J.L. Benton, M.A. Kennedy, J. Michel, and L.C. Kimerling, "Interstitial defect reactions in silicon processed by reactive ion etching," Materials Science Forum, 83-87 1433 (1992).
J.L. Benton, B.E. Weir, D.J. Eaglesham, R.A. Gottscho, J. Michel, and L.C. Kimerling, "Measure of defect profiles in reactive ion etched silicon," Journal of Vacuum Science Technology B, 10 540 (1992).
H. Kitagawa, L.C. Kimerling, and S. Tanaka, "Iron-related levels in n-Type silicon studied by hall effect and DLTS measurements," Journal of Electronic Materials, 21 863 (1992).
J. Michel, E.A.Fitzgerald, Y-H. Xie, P.J. Silverman, M. Morse, and L.C. Kimerling, "Photoluminescence investigations of graded, totally relaxed Ge x Si 1-x structures," Journal of Electronic Materials, 21 1099 (1992).
1991
D.J. Eaglesham, J. Michel, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, J.L. Benton, A. Polman, Y-H. Xie, and L.C. Kimerling, "The microstructure of erbium-implanted Si," Applied Physics Letters, 58 2797 (1991).
H. Chou, H.S. Chen, A.R. Kortan, L.C. Kimerling, F.A. Thiel, and M.K. Wu, "Single step processing of a TlBa 2 Ca 2 Cu 3 0 y superconducting film by liquid-gas solidification," Applied Physics Letters, 58 2836 (1991).
E.A. Fitzgerald, P.E. Freeland, M.T. Asom, W.P. Lowe, R.A. MacHarrie, Jr., B.E. Weir, A.R. Kortan, F.A. Thiel, Y-H. Xie, A.M. Sergent, S.L. Cooper, G.A. Thomas, and L.C. Kimerling, "Epitaxially stabilized Ge x Sn 1-x diamond cubic alloys," Journal of Electronic Materials, 20 489 (1991).
J.L. Benton, J. Michel, L.C. Kimerling, R.A. Gottscho, and B.E. Weir, "Carbon reactions in reactive ion etched silicon," Journal of Electronic Materials, 20 643 (1991).
J.L. Benton, J. Michel, L.C. Kimerling, D.C. Jacobson, Y-H. Xie, D.J. Eaglesham, E.A. Fitzgerald, and J.M. Poate, "The electrical and defect properties of erbium-implanted silicon," Journal of Applied Physics, 70 2667 (1991).
J. Michel, J.L. Benton, R.F. Ferrante, D.C. Jacobson, D.J. Eaglesham, E.A. Fitzgerald, Y-H. Xie, J.M. Poate, and L.C. Kimerling, "Impurity enhancement of the 1.54-µm Er 3+ luminescence in silicon," Journal of Applied Physics, 70 2672 (1991).
L.C. Kimerling, "Defect engineering," MRS Bulletin, 26 42 (1991).
L.C. Kimerling, "Electronic states of point defects in silicon," Advanced Science and Technology of Silicon Materials, 1 430 (1991).
1990
L.C. Kimerling, "The influence of electronic excitation on the performance and reliability of semiconductor devices," Review of Solid State Science, 4 335 (1990).
Y.-H. Xie, J. Michel, D.C. Jacobson, E.A. Fitzgerald, J.L. Benton, D.J. Eaglesham, L.C. Kimerling, J.M. Poate and C.L. Paulnack, "Correlative study on photoluminescence and electrical activation of erbium in silicon," AT&T Technical Memorandum, (1990).
L.C. Kimerling, "Reaching the limits in silicon processing," AT&T Technical Journal, 69 16 (1990).
H. Chou, H.S. Chen, E.M. Gyorgy, A.R. Kortan, L.C. Kimerling, F.A. Thiel and M.K. Wu, "Superconducting properties of (Tl0.64Bi0.16Pb0.2) Ba2-xSrxCa3Cu40y by liquid-gas-solidification processing," Physica C, 69 16 (1990).
1989
R. Kortan, H.S. Chen, J.M. Parsey, Jr. and L.C. Kimerling, "Morphology and microstructure of Al-Li-Cu quasicrystals," Journal of Materials Science, 24 1999 (1989).
L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky and C.E. Caefer, "Interstitial defect reactions in silicon," Materials Science Forum, 38 141 (1989).
L.C. Kimerling, M.T. Asom, F.A. Thiel and J.M. Parsey, Jr., "Nonstoichiometry related acceptors in GaAs," Materials Science Forum, 40 945 (1989).
H.S. Chen, A.R. Kortan, F.A. Thiel and L.C. Kimerling, "YbBa2Cu3O7 epitaxial films grown by an Ag-enhanced liquid gas solidification," Applied Physics Letters, 52 191 (1989).
M.T. Asom, E.A. Fitzgerald, A.R. Kortan, B. Spear and L.C. Kimerling, "Epitaxial growth of metastable SnGe alloys," Applied Physics Letters, 55 578 (1989).
M.T. Asom, A.R. Kortan, L.C. Kimerling and R.C. Farrow, "Structure and stability of metastable a-Sn," Applied Physics Letters, 55 1439 (1989).
A. Katz, B.E. Weir, D.M. Maher, P.M. Thomas, M. Soler, C. Dautremont-Smith, R.F. Karlicek, Jr., J.D. Wynn and L.C. Kimerling, "Highly stable W/p-In0.53 Ga0.47 As ohmic contacts formed by rapid thermal processing," Applied Physics Letters, 55 2220 (1989).
H.S. Chen, E.M. Gyorgy and L.C. Kimerling, "Transport properties of Tl-based superconductors prepared by liquid-gas-solidification process," Modern Physics Letters B, 3 975 (1989).
A.R. Kortan, F.A. Thiel, H.S. Chen and L.C. Kimerling, "Melt Oxidized liquid Phase Epitaxy of YBa2Cu3O7," AT&T Technical Memorandum, (1989).
M.T. Asom, E.A. Fitzgerald, F.A. Thiel, R. People, D. Eaglesham, L. Luther, S.K. Sputz and L.C. Kimerling, "Properties of MBE grown heterostructures of GaAs/InSb and InP/InSb," AT&T Technical Memorandum, (1989).
L.C. Kimerling, "Process control for heterogeneous materials systems: A universal challenge," Journal of Materials, 41 8 (1989).
1988
M.T. Asom, J.M. Parsey, Jr., L.C. Kimerling, R. Sauer and F.A. Thiel, "Changes in the electronic properties of bulk GaAs by thermal annealing," Applied Physics Letters, 52 1472 (1988).
H.S. Chen, S.H. Liou, A.R. Kortan and L.C. Kimerling, "Growth of epitaxial YbBa2Cu3O7 superconductor by liquid-gas-solidification processing," Applied Physics Letters, 53 705 (1988).
1987
A. Chantre, S.J. Pearton, L.C. Kimerling, K.D. Cummings and W.C. Dautremont-Smith, "Interaction of hydrogen and thermal donor defects in silicon," Applied Physics Letters, 50 513 (1987).
M.T. Asom, J.L. Benton, R. Sauer and L.C. Kimerling, "Interstitial defect reactions in silicon," Applied Physics Letters, 51 256 (1987).
R. Sauer, M. Asom, R. People, D.V. Lang, L.C. Kimerling and J.C. Bean, "New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu," Applied Physics Letters, 51 1185 (1987).
1986
K.M. Lee, L.C. Kimerling, B.G. Bagley and W.E. Quinn, "The optically detected magnetic resonance of dangling bonds at the Si/SiO2 interface," Solid State Communications, 57 615 (1986).
A.M. Chantre and L.C. Kimerling, "Metastable properties of iron-gallium and iron-indium pairs in silicon," AT&T Technical Memorandum, 1986.
R. D. Harris, G. D. Watkins and L.C. Kimerling, "Migration of interstitial boron in silicon," Materials Science Forum, 10-12 163 (1986).
A. Chantre and L.C. Kimerling, "Trends in the bistable properties of iron-acceptor pairs in silicon," Materials Science Forum, 10-12 387 (1986).
A. Chantre, J.L. Benton, M.T. Asom and L.C. Kimerling, "New impurity-defect reactions in silicon," Materials Science Forum, 10-12 1111 (1986).
1985
M. Stavola, K.M. Lee, P.E. Freeland and L.C. Kimerling, "Site symmetry and ground state characteristics for the oxygen donor in silicon," Physics Review Letters, 54 2639 (1985).
L.C. Kimerling, "Frontiers in the science of electronic materials," Journal of Metals, 37 42 (1985).
L.C. Kimerling and J.M. Parsey, Jr., "Imperfection in semiconductor materials," Journal of Metals, 37 60 (1985).
A.M. Chantre and L.C. Kimerling, "A new configurationally multistable defect in silicon," Applied Physics Letters, 48 1000 (1985).
1984
J.L. Benton, M. Levinson, A.T. Macrander, H. Temkin and L.C. Kimerling, "Recombination enhanced defect annealing in n-InP," Applied Physics Letters, 45 556 (1984).
S. Mil'shtein, D.C. Joy, S.D. Ferris and L.C. Kimerling, "Defect characterization using SEM-CCM: Relative contrast measurements," Physica A, 84 363 (1984).
M. Stavola, M. Levinson, J.L. Benton and L.C. Kimerling, "Extrinsic self-trapping and negative U in semiconductors: A metastable center in InP," Physical Review B, 30 832 (1984).
M. Stavola, M. Levinson, J.L. Benton and L.C. Kimerling, "Large lattice relaxation in a multielectron system: Binding energies and criteria for negative effective U," Journal of Electronic Materials, 14A 191 (1984).
J.L. Benton, K.M. Lee, P.E. Freeland and L.C. Kimerling, "Structural determination of the oxygen donor in Si," Journal of Electronic Materials, 14A 647 (1984).
1983
L.C. Kimerling, "Defects in semiconductors—1982," Physica, 116B 1 (1983).
J.L. Benton, L.C. Kimerling and M. Stavola, "The oxygen-related donor-defect in silicon," Physica, 116B 271 (1983).
L.C. Kimerling and J.L. Benton, "Electronically controlled reactions of interstitial iron in silicon," Physica, 116B 297 (1983).
M. Stavola, J.R. Patel, L.C. Kimerling and P.E. Freeland, "Diffusivity of oxygen in silicon at the donor formation temperature," Applied Physics Letters, 42 73 (1983).
M. Levinson, J.L. Benton and L.C. Kimerling, "Electronically controlled metastable defect reaction in InP," Physics Review Bulletin, 27 6216 (1983).
M. Stavola and L.C. Kimerling, "Symmetry determination for deep states in semiconductors from stress-induced dichroism of photocapacitance," Journal of Applied Physics, 54 7 (1983).
L.C. Kimerling, "Electronic structure and properties," Book Review, ASTM Journal, 229 (1983).
M. Levinson, M. Stavola, J.L. Benton and L.C. Kimerling, "The metastable M center in InP: Defect charge state controlled structural relaxation," Physics Review Bulletin, 28 5848 (1983).
1982
M. Levinson, J.L. Benton, L.C. Kimerling and H. Temkin, "Defect states in electron bombarded InP," Applied Physics Letters, 40 990 (1982).
J.L. Benton and L.C. Kimerling, "Capacitance transient spectroscopy of trace contamination in silicon," Journal of the Electrochemical Society, 129 2098 (1982).
1981
L.C. Kimerling and J.L. Benton, "Oxygen related donor states in silicon," Applied Physics Letters, 39 410 (1981).
V. Swaminathan, L.C. Kimerling and W.R. Wagner, "The effect of electron irradiation on the low-temperature emission spectra from Ge-doped Ga0.60 Al0.40 As grown by liquid phase epitaxy," Applied Physics Letters, 38 881 (1981).
J.R. Patel and L.C. Kimerling, "Dislocation energy levels in deformed silicon," Crystal Research and Technology, 16 187 (1981).
1980
J.L. Benton, C.J. Doherty, L.C. Kimerling, H.J. Leamy, D.F. Flamm and S.D. Ferris, "Hydrogen passivation of point defects in silicon," Applied Physics Letters, 36 670 (1980).
1979
L.C. Kimerling and J.R. Patel, "Defect states associated with dislocations in silicon," Applied Physics Letters, 34 (1) 73 (1979).
L.J. Cheng, J.P. Karins, J.W. Corbett and L.C. Kimerling, "Positron lifetimes in GaAs," Journal of Applied Physics, 50 (4) 2962 (1979).
J.R. Patel and L.C. Kimerling, "Dislocation defect states in silicon," Journal de Physique, C6 67 (1979).
J.R. Troxell, A.P. Chattergee, G.D. Watkins and L.C. Kimerling, "Recombination enhanced migration of interstitial aluminum in silicon," Physical Review B, 19 (10) 5336 (1979).
1978
H.S. Chen, L.C. Kimerling, J.M. Poate and W.L. Brown, "Diffusion in a Pd-Cu-Si metallic glass," Applied Physics Letters, 32 461 (1978).
L.C. Kimerling and J.R. Patel, "Defect states of dislocations in silicon," Bulletin of the American Physics Society, 23 257 (1978).
G.K. Celler, J.M. Poate and L.C. Kimerling, "Spatially controlled crystal regrowth of ion implanted silicon by laser irradiation," Applied Physics Letters, 32 464 (1978).
L.E. Katz and L.C. Kimerling, "Defect formation during high pressure, low temperature oxidation of silicon," Journal of the Electrochemical Society, 125 1680 (1978).
J.L. Benton and L.C. Kimerling, "Laser induced defects in silicon," Proceedings of the Bell System Symposium on Laser Processing of Semiconductors, Princeton, NJ, 99 (1978).
W.C. Ballamy and L.C. Kimerling, "Premature failure in Pt-GaAs IMPATTS - Recombination assisted diffusion as a failure mechanism," IEEE Transactions on Electron Devices, ED-25 746 (1978).
L.C. Kimerling, "Recombination enhanced defect reactions," Solid State Electronics, 21 1391 (1978).
1977
A.J.R. de Kock, S.D. Ferris, L.C. Kimerling and H.J. Leamy, "SEM observations of dopant striations in silicon," Journal of Applied Physics, 48 301 (1977).
H.J. Leamy and L.C. Kimerling, "Electron beam induced annealing of defects in GaAs," Journal of Applied Physics, 48 2795 (1977).
L.C. Kimerling, H.J. Leamy and J. R. Patel, "The electrical properties of stacking faults and precipitates in heat treated, dislocation free, Czochralski silicon," Applied Physics Letters, 30 217 (1977).
D.V. Lang, R.A. Logan and L.C. Kimerling, "Identification of the defect state associated with a gallium vacancy in GaAs and Alx Ga1-x As," Physical Review, 15 4874 (1977).
L.C. Kimerling, H.J. Leamy and J. R. Patel, "Defect states associated with dislocations and stacking faults in silicon," Bulletin of the American Physics Society, 22 267 (1977).
G.L. Miller, D.V. Lang and L.C. Kimerling, "Capacitance transient spectroscopy," Annual Review of Materials Science, 7 377 (1977).
1976
L.C. Kimerling, P. Petroff and H.J. Leamy, "Injection stimulated dislocation motion in semiconductors," Applied Physics Letters, 28 297 (1976).
D.V. Lang and L.C. Kimerling, "Observation of athermal defect annealing in GaP," Applied Physics Letters, 28 248 (1976).
D.V. Lang, L.C. Kimerling and S.Y. Leung, "Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron-irradiated n-GaAs," Journal of Applied Physics, 47 3587 (1976).
P.M. Petroff and L.C. Kimerling, "A dislocation climb model in compound semiconductors with the zinc blende structure," Applied Physics Letters, 29 461 (1976).
P.M. Petroff and L.C. Kimerling, "Recombination enhanced point defect mobility and degradation of GaAlAs-GaAs (DH) laser diodes," Bulletin of the American Physics Society, 21 265 (1976).
D.V. Lang and L.C.Kimerling, "Observation of athermal recombination enhanced defect motion in semiconductors," Bulletin of the American Physics Society, 21 437 (1976).
L.C. Kimerling, "Electrical properties of lattice defects in Si and Ge," Bulletin of the American Physics Society, 21 296 (1976).
L.C. Kimerling and H. J. Leamy, "Contrast analysis of semiconductor impurity distributions and defect structures observed in SEM studies," Bulletin of the American Physics Society, 21 297 (1976).
L.C. Kimerling, "New developments in defect studies in semiconductors," IEEE Trans. Nuclear Science, NS-23 1497 (1976).
1975
L.C. Kimerling, H.M. DeAngelis and J.W. Diebold, "The role of defect charge state in the stability of point defects in silicon," Solid State Communications, 16 171 (1975).
L. C. Kimerling and D. V. Lang, "The influence of e-h recombination on defect stability in semiconductors," Bulletin of the American Physics Society, 20 317 (1975).
J.D. Weeks, J.C. Tully and L.C. Kimerling, "Theory of recombination-enhanced defect reactions in semiconductors," Bulletin of the American Physics Society, 20 318 (1975).
J.J. Hauser and L.C. Kimerling, "Electrical conduction in Si-implanted amorphous Si," Physical Review B 11 4043 (1975).
A.J.R. de Kock, S.D. Ferris, L.C. Kimerling and H.J. Leamy, "Investigation of defects and striations in as-grown Si crystals by SEM using schottky diodes," Applied Physics Letters, 27 313 (1975).
J.D. Weeks, J.C. Tully and L.C. Kimerling, "Theory of recombination-enhanced defect reactions in semiconductors," Physics Review Bulletin, 12 3286 (1975).
D.V. Lang and L.C. Kimerling, "Studies of recombination enhanced defect motion in III-V semiconductors," IEEE Transactions on Electronic Devices, ED-22 1054 (1975).
L.C. Kimerling, P. Petroff and H.J. Leamy, "Injection stimulated dislocation motion in semiconductors," IEEE Transactions on Electronic Devices, ED-22 1054 (1975).
1974
L.C. Kimerling, "The Influence of deep traps on the measurement of free carrier distributions in semiconductors by junction capacitance techniques," Journal of Applied Physics, 45 1869 (1974).
D.V. Lang and L.C. Kimerling, "Observation of recombination enhanced defect reactions in semiconductors," Physical Review Letters, 33 489 (1974).
1973
L.C. Kimerling, "On the role of defect charge state in the stability of point defects in silicon," Bulletin of the American Physics Society, 19 210 (1973).
1972 — N/A
1971
L.C. Kimerling, H.M. DeAngelis and C.P. Carnes, "Annealing of electron-irradiated, n-type silicon: Donor concentration dependence," Physical Review Bulletin, 3 427 (1971).
L.C. Kimerling and P.J. Drevinsky, "Carrier removal effects in neutron-irradiated, lithium-doped silicon," IEEE Transactions in Nuclear Science, NS-18 60 (1971).
P.J. Drevinsky and L.C. Kimerling, "Carrier removal in Li-doped silicon irradiated with 5-MeV neutrons," Bulletin of the American Physics Society, 16 499 (1971).
L.C. Kimerling and C.P. Carnes, "Annealing of electron-irradiated, n-type silicon: Illumination and fluence dependence," Journal of Applied Physics, 42 3548 (1971).
1970
H.M. DeAngelis, C.P. Carnes and L.C. Kimerling, "Isochronal annealing of electron-irradiated, p-doped silicon," Bulletin of the American Physics Society, 15 397 (1970).
L.C. Kimerling, C.P. Carnes and H.M. DeAngelis, "Defect introduction in electron-irradiated, p-doped silicon," Bulletin of the American Physics Society, 15 397 (1970).
